Properties of Amorphous Films Prepared from SiH_4-N_2-H_2 Gas Mixture
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概要
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The electrical properties and the IR absorption spectra of amorphous films made by the glow-discharge of a SiH_4-N_2-H_2 gas mixture have been investigated as a function of the nitrogen to silane mole fraction. Efficient doping is possible in these amorphous films. The highest resistivity obtained is 1×10^<14> Ω・cm, which is sufficient to be used as a photoreceptor of electrophotography.
- 社団法人応用物理学会の論文
- 1982-06-20
著者
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Katoh Kazuhisa
Research & Development Lab. Stanley Electric Co. Ltd.
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Watanabe Hideo
Sendai Radio Technical College
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Yasui Masaru
Research & Development Lab., Stanley Electric Co. LTD.
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Yasui Masaru
Research & Development Lab. Stanley Electric Co. Ltd.
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Watanabe Hideo
Sendai National College Of Technology
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