Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma
スポンサーリンク
概要
- 論文の詳細を見る
Fractional electron density, which is partial electron density in energy distribution, has been measured in a high-density non-magnetic ultrahigh-frequency (UHF) plasma from optical emission of rare gases (Xe, Ar, He). The technique was applied to rare gas mixed plasma, as well as fluorocarbon gas containing plasma. In the calculation procedure, the fractional electron density was assumed to be constant between the two threshold energies of the different emissions. In the experiment, total electron density was changed by changing the UHF source power without changing electron temperature measured by a single probe. However, in UHF plasma, the fractional electron density between the threshold energy of ArI and HeI emissions increased more than total electron density increase. This result was obtained both for Ar/He plasma and Ar/C4F8/He/Xe plasma. On the other hand, fractional electron density over the threshold energy of He increased at about the same rate of or less than the total electron density increase. In addition, the fractional electron density between the threshold energy of XeI and ArI in Ar/C4F8/He/Xe plasma increased less than total electron density increase. These results indicate that the electron temperature, which is commonly used as a typical index value of electron energy of the plasma, does not reflect the fine structure of EEDF. The optical technique can supplement this point, especially at the high energy tail of EEDF.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-04-30
著者
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HIKOSAKA Yukinobu
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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NODA Shuichi
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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OKIGAWA Mitsuru
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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INOUE Masami
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET)
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Kinoshita Keizo
Plasma Technology Laboratory Association Of Super-advanced Electronics Technologies(aset)
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Kinoshita Keizo
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET),
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Itabashi Naoshi
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
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Itabashi Naoshi
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET),
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Noda Shuichi
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
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Okigawa Mitsuru
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
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Okigawa Mitsuru
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET),
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Hikosaka Yukinobu
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET),
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Hikosaka Yukinobu
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
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Inoue Masami
Plasma Technology Laboratory, Association of Super-advanced Electronics Technologies
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Inoue Masami
Plasma Technology Laboratory, Association of Super-Advanced Electronics Technologies (ASET),
関連論文
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- Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma
- Mechanism of Radical Control in Capacitive RF Plasma for ULSI Processing
- Monitoring of Electron Energy Distribution Change from Optical Emission for Nonmagnetic Ultrahigh-Frequency Plasma