Charge-Sensitive Infrared Phototransistors Developed in the Wavelength Range of 10--50 μm
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概要
- 論文の詳細を見る
Charge-sensitive infrared phototransistors (CSIPs) have been developed in a wavelength range of 12 to 45 μm by using double-quantum-well GaAs/AlGaAs heterostructures. Important parameters for designing the devices are discussed. The detectors are operated at 4.2 K. Quantum efficiency is affected by the crystal quality, which is supposed to be primarily determined by the imperfection in barrier regions. The specific detectivity, substantially determined by the quantum efficiency, is in the range of $D^{*} = 10^{12}{\mbox{--}}10^{16}$ cm Hz1/2/W.
- 2011-02-25
著者
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Komiyama Susumu
Department Of Basic Science University Of Tokyo
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Kubota Hiroshi
Department Of Appl Ed Physics Sccond Faculty Of Engineering Tokyo Univ.
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Ueda Takeji
Department Of Basic Science University Of Tokyo:crest Japan Science And Technology Agency
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Nagai Naomi
CREST, Japan Science and Technology Agency, Chiyoda, Tokyo 102-0075, Japan
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Soh Yuki
Department of Computer Science and Electrical Engineering, Kumamoto University, Kumamoto 860-8555, Japan
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Kubota Hiroshi
Department of Computer Science and Electrical Engineering, Kumamoto University, Kumamoto 860-8555, Japan
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