Characteristics of Self-Assembled InSb Dots Grown on (100) AlGaSb by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
A self-assembling method to produce dense InSb quantum dots on Al0.5Ga0.5Sb is reported. Samples were grown on (100)-oriented GaAs substrates by molecular beam epitaxy and characterized by reflection high-energy electron diffraction, atomic force microscopy, Raman spectroscopy and photoluminescence. Low-temperature deposition of InSb combined with an in situ post annealing resulted in small-sized three-dimensional islands as high as 1010 cm-2 acting as quantum dots, while deposition at 400°C yielded much larger sized islands at low density. It is also shown that the density and size of the islands are controllable by changing the annealing conditions.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-05-15
著者
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SASA Shigehiko
New Materials Research Center, Osaka Institute of Technology
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INOUE Masataka
New Materials Research Center, Osaka Institute of Technology
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YANO Mitsuaki
New Materials Research Center, Osaka Institute of Technology
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OHKAWA Hiroyuki
New Materials Research Center, Osaka Institute of Technology
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Koike Kazuto
New Materials Research Center Osaka Institute Of Technology
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Sasa Shigehiko
New Materials Research Center, Osaka Institute of Technology,
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Seki Yoshitaka
New Materials Research Center, Osaka Institute of Technology,
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Koike Kazuto
New Materials Research Center, Osaka Institute of Technology,
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Inoue Masataka
New Materials Research Center, Osaka Institute of Technology,
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Ohkawa Hiroyuki
New Materials Research Center, Osaka Institute of Technology,
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