Preparation of CoFe2O4 Spin Valves and Improvement of Their Magnetoresistance Property by Postannealing
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概要
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We have fabricated spin valves which had the simple structure of Si/SiO2/CoFe2O4 (40 nm)/Co (2 nm)/Cu (2 nm)/Co (4 nm) by rf-magnetron sputtering at room temperature. A hard magnetic and insulating Co-ferrite film was used as a pinning layer. As-deposited films showed a high sheet resistance of 36.3 $\Omega$/square and a magnetoresistance (MR) ratio of 4.5%. The MR property of the spin valves was significantly improved by postannealing in a vacuum. An MR ratio of 10.5% was attained by annealing at 300°C for 4 h. The variation in sheet resistance was approximately 3.9 $\Omega$/square. This remarkable increase in MR ratio could be attributed to the construction of clear Co/Cu/Co/CoFe2O4 interfaces and the improvement of the magnetic property of the Co-ferrite layer by postannealing.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-11-15
著者
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Okamura Soichiro
Graduate School Of Materials Science Nara Institute Of Science And Technology (naist)
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Sakakima Hiroshi
Graduate School Of Materials Science Nara Institute Of Science And Technology (naist)
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Shiosaki Tadashi
Graduate School Of Materials Science Nara Institute Of Science And Technology
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Naganuma Hiroshi
Graduate School Of Engineering Tohoku University
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Naganuma Hiroshi
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
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Sakakima Hiroshi
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama-cho, Ikoma, Nara 630-0192, Japan
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