OKUNO Yasutoshi | ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.
スポンサーリンク
概要
- Mazumder Motaharul Kabirの詳細を見る
- 同名の論文著者
- ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.の論文著者
関連著者
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Mori Yoshihiro
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Okuno Yasutoshi
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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OKUNO Yasutoshi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.
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奥野 泰利
日本テキサスインスツルメンツ(株)、ulsi技術開発センター
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Tsuzumitani Akihiko
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Okuno Yasutoshi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
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Mori Yoshihiro
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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TSUZUMITANI Akihiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Co
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Okuno Y
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Mori Y
Research Center For Ultra-precision Science And Technology Graduate School Of Engineering Osaka Univ
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Mori Yusuke
Graduate School of Engineering, Osaka University
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SHIMIZU Tadami
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Mori Y
Osaka Univ. Suita Jpn
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奥野 泰利
松下電器産業(株)
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Tsuzumitani Akihiko
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corporation
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Mori Yuzo
Department Of Mechanical Engineering Kochi National College Of Technology
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Shibata Jun
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Yamamoto Kazuhiko
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd.
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Yamamoto K
Kobayasi Institute Of Physical Research
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Shibata J
Japan Fine Ceramic Center Nagoya Jpn
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OHNO Yoshikazu
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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YONEDA Masahiro
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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OGAWA Hisashi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.
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SHIBATA Jun
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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YAMAMOTO Kazuhiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporatio
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Yutani Akie
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Shimizu T
Univ. Occupational And Environmental Health Jpn
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Shinkawata Hiroki
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Mazumder Motaharul
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Shimizu Tadao
Department Of Physics University Of Tokyo
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Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
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Yamamoto K
Storage Media Systems Development Center Matsushita Elec. Ind. Co. Ltd.
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Shimizu T
Faculty Of Engineering Chiba University
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Shimizu T
Chiba Univ. Chiba Jpn
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Ogawa Hisashi
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electric Industrial Co.
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Yamamoto Kazuhiko
ULSI Process Technology Development Center, Matsushita Electric Industrial Co., Ltd., 19 Nishikujo-Kasugacho, Minami-ku, Kyoto 601-8413, Japan
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TSUNEMINE Yoshikazu
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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OKUDAIRA Tomonori
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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KASHIHARA Keiichiro
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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YUTANI Akie
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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SHINKAWATA Hiroki
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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MAZUMDER Motaharul
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technolog
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DORNFEST Charles
Applied Materials
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JIN Xiaoliang
Applied Materials
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KHER Shreyas
Applied Materials
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TAO Jerry
Applied Materials
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WANG Yaxin
Applied Materials
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ZHAO Jun
Applied Materials
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Okudaira Tomonori
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Kashihara Keiichiro
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Tsunemine Yoshikazu
Lsi Manufacturing Technology Unit Wafer Process Engineering Development Division Renesas Technology
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Ogawa Hisashi
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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Shimizu Tatsuo
Faculty Of Technology
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Shimizu Tadao
Department Of Industrial Chemistry Chiba Institute Of Technology
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Shimizu Tadao
Department Of Physics Faculty Of Science The University Of Tokyo
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Okudaira Tomonori
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsunemine Yoshikazu
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Mazumder Motaharul
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Shinkawata Hiroki
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Tsuzumitani Akihiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
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Ogawa Hisashi
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp., 19, Nishikujo-kasuga cho, Minami-ku, Kyoto 601-8413, Japan
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Ohno Yoshikazu
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Yoneda Masahiro
LSI Manufacturing Technology Unit, Wafer Process Engineering Development Division, Renesas Technology Corp., 4-1, Mizuhara, Itami, Hyogo 664-0005, Japan
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Shimizu Tadami
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
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Tsuzumitani Akihiko
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
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Mori Yoshihiro
ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
著作論文
- Pt/Ba_xSr_TiO_3/Pt Capacitor Technology for 0.15μm Embedded Dynamic Random Access Memory
- Low Temperature BST-CVD Process for the Concave-Type Capacitors Designed for Logic-Base-Embedded DRAMs
- Extendibility of Ta_2O_5 Metal-Insulator-Metal Capacitor Using Ru Electrode
- Ru-Ta_2O_5MIM Capacitor toward 0.1μm DRAM Cell
- Pt/BaxSr(1-x)TiO3/Pt Capacitor Technology for 0.15 μm Embedded Dynamic Random Access Memory
- Extendibility of Ta2O5 Metal-Insulator-Metal Capacitor Using Ru Electrode