Localized Surface Plasmon Polariton Enhanced Radiative Recombination in Ion-Implanted Silicon Emitters
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概要
- 論文の詳細を見る
Silicon nanoparticles synthesized using low-energy (35 keV) silver ion beam implantation in crystalline Si exhibit enhanced radiative recombination efficiency due to resonant coupling of localized surface plasmon polariton to the bound excitons confined at the nanoscale Si interface. A photoluminescence (PL) enhancement of more than 20 times is observed due to the local field effect induced by the metal nanoparticles at 250 K. At 15 K, fourfold enhancement in the radiative recombination rate is observed as the presence of the PL due to Ag ion implantation is 400 ps compared with 2.1 ns without the metal ions.
- 2010-10-25
著者
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Park Seong
Department Of General Surgery College Of Medicine Chung-ang University
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Kim Moon
Department Of Dermatology And Cutaneous Biology Research Institute Yonsei University College Of Medi
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Neogi Arup
Department Of Physics University Of North Texas
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Mcdaniel Floyd
Department Of Physics University Of North Texas
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Park Seong
Department Of Materials Science And Engineering University Of Texas
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Singh Akhilesh
Department of Physics, University of North Texas, Denton, TX 76203, U.S.A.
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Gryczynski Karol
Department of Physics, University of North Texas, Denton, TX 76203, U.S.A.
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Singh Akhilesh
Department Of Physics University Of North Texas
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Gryczynski Karol
Department Of Physics University Of North Texas
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Kim Moon
Department Of Materials Science And Engineering University Of Texas
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PARK Seong
Department of Computer Engineering, Chonnam National University
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