Structural Change of InGaN Nanostructures Grown by Mixed-Source Hydride Vapor Phase Epitaxy
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概要
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We determined the effect of the type of substrate on the growth of InGaN nanostructures by mixed-source hydride vapor phase epitaxy (HVPE). InGaN nanostructures were formed on $c$-plane, $r$-plane sapphire, and undoped GaN substrates at various growth temperatures. Also, we looked into the changes in the structural and optical characteristics of InGaN nanostructures when antimony (Sb) is used as a surfactant during the growth of InGaN nanostructures. The samples were characterized by scanning electron microscopy (SEM) and photoluminescence (PL) measurement. The density of the nanostructures on the surface and the indium composition of the InGaN layer varied depending on the type of substrate and growth temperature. The aligning direction of the nanostructures markedly changed and the indium composition increased when Sb was used as the surfactant during the growth of the InGaN nanostructure, compared with the results of the InGaN nanostructures grown without Sb addition.
- 2011-01-25
著者
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Lee Ah
Department Of Clinical Pathology St. Mary's Hospital College Of Medicine The Catholic Universit
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Ahn Hyung
Department Of Applied Physics Korea Maritime University
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Kim Kyung
Department Of Anesthesia And Pain Medicine School Of Medicine Pusan National University
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Lee Gang
Department of Applied Sciences, Korea Maritime University, Busan 606-791, Korea
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Jeon Hun
Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
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Jeon Hun
Department of Nano Semiconductor Engineering, Korea Maritime University, Busan 606-791, Korea
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Ok Jin
Major of Semiconductor Physics, Korea Maritime University, Busan 606-791, Korea
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Jo Dong
Department of Nano Semiconductor Engineering, Korea Maritime University, Busan 606-791, Korea
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Yang Min
Major of Semiconductor Physics, Korea Maritime University, Busan 606-791, Korea
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Lee Ah
Department of Applied Science, Korea Maritime University, Busan 606-791, Korea
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