ANNEALING BEHAVIOR OF BIAS INDUCED DEGRADATION IN A-SI : H TFTs (Korea-Japan Joint Symposium on Information Display)
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概要
- 論文の詳細を見る
Amorphous silicon-silicon nitrids field effect transistors are degraded by applying the positive gate bias stress and light illumination. Thermal recovery was studied by isochronal annesling. Annesling temperature dependencies of source-drain current as well as of the threshold voltags give the evidences for the multipls steps of annesling stages. There are the avidences of the interface defect creation, and the annealing temperature of interface defect is different from that of the bulk defect.
- 社団法人映像情報メディア学会の論文
- 1990-10-30
著者
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LEE Choochon
Department of Physics, Korea Advanced Institute of Science and Technology
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Bae Byung
Department Of Physics Korea Advanced Institute Of Science And Technology
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Lee Choochon
Department Of Physics Korea Advanced Institute Of Science And Technology
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Lee Choochon
Department Of Physics Kaist
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