Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors

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概要

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• Under white light illumination, amorphous indium--gallium--zinc oxide (a-IGZO)-based thin-film transistors (TFTs) showed a large negative shift of threshold voltage of more than -15 V depending on the process conditions. We investigated the influences of both gate bias and white light illumination on device properties of IGZO-based TFTs untreated and treated with high-energy electron beam irradiation (HEEBI). The TFTs were treated with HEEBI in air at room temperature (RT), electron beam energy of 0.8 MeV, and a dose of 1\times 10^{14} electrons/cm2. The HEEBI-treated TFTs showed an improved stability under negative bias illumination stress (NBIS) and positive bias illumination stress (PBIS) compared with non-HEEBI-treated TFTs, suggesting that the acceptor-like defects might be generated by HEEBI treatment near the valence band edge.

• 2012-09-25

著者

• Yun Eui-jung

  Department Of Electrical Electronic And Control Engineering Hoseo University

• Moon Hye

  Department Of Chemistry Pohang University Of Science And Technology

• Bae Byung

  Department Of Physics Korea Advanced Institute Of Science And Technology

• Ryu Min

  Oxide Electronics Research Team, ETRI, Daejeon 305-350, Korea

• Moon Hye

  Department of Semiconductor and Display Engineering, Hoseo University, Asan, Chungnam 336-795, Korea

• Cho Kyoung

  Oxide Electronics Research Team, ETRI, Daejeon 305-350, Korea

• Bae Byung

  Department of Semiconductor and Display Engineering and College of New IT Engineering, Hoseo University, Asan, Chungnam 336-795, Korea

• Yu Kyeong

  Department of Semiconductor and Display Engineering, Hoseo University, Asan, Chungnam 336-795, Korea

• Yun Eui-Jung

  Department of Semiconductor and Display Engineering and Department of System Control Engineering, Hoseo University, Asan, Chungnam 336-795, Korea

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• Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors

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