Thin-Film Transistors with Polycrystalline Silicon Prepared by a New Annealing Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-05-15
著者
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NAM Kee-Soo
Electronics and Telecommunications Research Institute
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Song Yoon-ho
Electronics And Telecommunications Research Institute
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Baek Jong-tae
Electronics And Telecommunications Research Institute
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Kong Hong-jin
Department Of Physics Korea Advanced Institute Of Science And Technology
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Nam K‐s
Electronics And Telecommunication Res. Inst. Taejon Kor
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Lee S‐s
Korea Inst. Sci. And Technol. Seoul Kor
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LEE Sang-Soo
Department of Physics, Korea Advanced Institute of Science and Technology
関連論文
- Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement
- Determination of Flat-Band Voltages for Fully Depleted Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's)
- Low-Voltage Operating Triode-Type Field Emission Displays Controlled by Amorphous-Silicon Thin-Film Transistors
- Thin-Film Transistors with Polycrystalline Silicon Prepared by a New Annealing Method