Characterizations of Ferroelectric Transistors with BaMgF_4 Dielectric

概要

論文の詳細を見る
The structure and electrical characteristics of metal-ferroelectric-semiconductor FET (MFSFET) for single transistor memory are presented. The MFSFET comprises of polysilicon islands as source/drain electrodes and BaMgF_4 film as a gate dielectric. The polysilicon source/drain were built-up prior to the film formation to suppress a degradation due to high thermal cycle. From the MFS capacitor, the remnant polarization and coercive field were measured to be about 0.6μC/cm^2 and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse possibly due to film cracking or bad adhesion between the film and the Al electrode.
社団法人電子情報通信学会の論文
1997-07-24