Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
スポンサーリンク
概要
- 論文の詳細を見る
Ferroelectric thin films have been studied for the application of MFIS(Metal-Ferroelectric-Insulator-Semiconductor)structure to non-volatile memory devices.Most important requirement of the ferroelectric thin films for MFISFET is an endurance of the hysteretic characteristics of the ferroelectric film at high temperature during the thermal cycles of source/drain formation and silicon dioxide glass flowing.To obtain optimum parameters of the ferroelectric films for reasonable operation as a switching transistor, I-V characteristics of MFIS were calculated by using Miller's MFIS model, and drain current and hysteretic window of MFISFET have also been investigated.Crystalline structures and element profiles in the film as well as remanent polarization of the MFIS capacitors were also investigated.The calculated results were compared with the experimental ones from the fabricated MFIS.
- 社団法人電子情報通信学会の論文
- 1998-07-24
著者
-
Lee Won-jae
Electronics And Telecommunications Research Institute
-
Kim Bo
Micro-electronics Technology Laboratory Etri
-
Yu Byoung-Gon
Semiconductor Division, ETRI,
-
Lee Won-Jae
Semiconductor Division, ETRI,
-
Lyu Jong-Son
Semiconductor Division, ETRI,
-
Lee Jin-Hyo
Semiconductor Division, ETRI,
-
Kim Bo
Semiconductor Division, ETRI,
-
Lee Won-jae
Research Center For Electronic Ceramics (rcec) Department Of Advanced Materials Engineering Dong-eui
-
YU Byoung-Gon
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
-
Yu B‐g
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
-
Yu Byoung-gon
Electronics And Telecommunications Research Institute
-
Yu Byoung-gon
Semiconductor Division Electronics And Telecommunications Research Institute
-
Yu Byoung-gon
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
-
Lyu J‐s
Electronics And Telecommunications Res. Inst. Daejon Kor
-
Lyu Jong-son
Semiconductor Division Etri
-
Lee Won-jae
Electronic Ceramic Materials Research Center Korea Advanced Institute Of Science And Technology
-
Lee Won-jae
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
-
Lee Jin-ho
Microwave Devices Team Etri
-
Kim B
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
-
Lee Jin-hyo
Semiconductor Division Etri
-
Kim Bo-woo
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
関連論文
- Etching Behavior and Damage Recovery of SrBi_2Ta_2O_9 Thin Films
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge_2Sb_2Te_5
- Dry Etching of Ge_2Sb_2Te_5 Thin Films into Nanosized Patterns Using TiN Hard Mask
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
- Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- An Axially Symmetric Liquid Crystal Display Using a Grating Surface of UV Curable Polymer (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- AN AXIALLY SYMMETRIC LIQUID CRYSTAL DISPLAY USING A GRATING SURFACE OF UV CURABLE POLYMER
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- Characterizations of Ferroelectric Transistors with BaMgF_4 Dielectric
- Characterizations of Ferroelectric Transistors with BaMgF_4 Dielectric
- A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- Electron Beam Damage in the SiN Membrane of an X-Ray Lithography Mask
- Annealing of RuO_2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO_3 Thin Films
- APPLICATIONS OF CHEMICAL-MECHANICAL-POLISHING PROCESS TO SILICON FIELD EMITTER ARRAY
- POLYCRYSTALLINE SILICON FIELD EMITTER ARRAYS WITH A GATED STRUCTURE
- Structural and Ferroelectric Properties of Sol-Get Deposited Nb-doped Pb[(Sc_Nb_)_Ti_]O_3 Thin Films
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)4Ti3O12/HfO2 Structure (先端デバイスの基礎と応用に関するアジアワークショップ)
- Fabrication and Characterization of Ferroelectric-Gate Memory Devices Using (Bi, La)_4 Ti_3O_/HfO_2 Structure (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
- SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
- Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- Growth and Characterization of (Ba_Sr_)TiO_3 Films Epitaxially Grown on (002) GaN/(0006) Al_2O_3 Electrode
- Ferromagnetism of Heteroepitaxial Zn_Cu_xO Films Grown on n-GaN Substrates
- A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures
- A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures
- Investigation of Low-Frequency Noise Behavior of In_Al_As/In_Ga_As Metamorphic High Electron Mobility Transistors
- Low-frequency noise characteristics of In_Al_As/In_Ga_As metamorphic high electron mobility transistors
- Characteristics of SiOF Films Formed by Remote Plasma Enhanced Chemical Vapor Deposition with SF_6 Gas
- Effects of Buffer Layer Structure in Poly Buffered LOCOS for Deep Submicron Silicon Devices
- The Vertical Configuration of Antiferroelectric Liquid Crystal Display Mode (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- The Vertical Configuration of Antiferroelectric Liquid Crystal Display Mode
- Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO_3 Thin Films
- Pt/RuO_2 Hybrid Bottom Electrodes and Their Effects on the Electrical Properties of (Ba, Sr)TiO_3 Thin Films
- Growth and Characterization of (Ba0.5Sr0.5)TiO3 Films Epitaxially Grown on (002) GaN/(0006) Al2O3 Electrode
- Ferromagnetism of Heteroepitaxial Zn1-xCuxO Films Grown on n-GaN Substrates
- Phase Formations and Electrical Properties of Bi3.15La0.85Ti3O12 and Sm-Doped Bi3.073La0.85Sm0.077Ti3O12 Thin Films with Annealing Temperature
- Annealing of RuO 2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO 3 Thin Films