A Non-destructive Readout Single Transistor FRAM with Floating Well structures
スポンサーリンク
概要
- 論文の詳細を見る
A nonvolatile single transistor type FRAM is proposed. To overcome the disturb problem of one-transistor-type FRAM during write operation, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 volt, which satisfies V/2 rule.
- 社団法人電子情報通信学会の論文
- 1999-07-23
著者
-
YOU In-Kyu
Micro-Electronics Technology Laboratory, ETRI
-
Yu Byoung
Micro-electronics Technology Lab. Etri
-
Kim S‐h
Dept. Of Semiconductor Science Wonkwang University
-
Kim Shi-ho
Micro-electronics Technology Laboratory Etri
-
You In-kyu
Micro-electronics Technology Lab. Etri
-
Lee Won
Micro-electronics Technology Lab. Etri
-
Lee Won-jae
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
-
Kim Shi-ho
Dept. Of Semiconductor Science Wonkwang University
-
Kim S‐h
Wonkwang Univ. Jeonbuk Kor
関連論文
- Etching Behavior and Damage Recovery of SrBi_2Ta_2O_9 Thin Films
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM
- Electrical Properties of SrBi_2Ta_2O_9/Insulator/Si Structures with Various Insulators
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- Formation of Ferroelectric Thin Films for MFIS or MFMIS Structure
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- Structural and Ferroelectric Properties of Sol-Get Deposited Nb-doped Pb[(Sc_Nb_)_Ti_]O_3 Thin Films
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- New High-k SrTa_2O_6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition : Surface, interface, and Films
- SrTa_2O_6 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition : Surfaces, Interfaces, and Films
- Phase Formations and Electrical Properties of(Sr_xBa_)Bi_2Ta_2O_9 Thin Films
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- A Non-destructive Readout Single Transistor FRAM with Floating Well structures
- Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
- Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
- Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
- Dynamic Analysis of Widely Tunable Laser Diodes Integrated with Sampled- and Chirped-Grating Distributed Bragg Reflectors and an Electroabsorption Modulator
- Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO_3 Thin Films
- Pt/RuO_2 Hybrid Bottom Electrodes and Their Effects on the Electrical Properties of (Ba, Sr)TiO_3 Thin Films