Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
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概要
- 論文の詳細を見る
A full process integration of Ta_2O_5/HSG capacitor technology has been developed for 1Gbit DRAM and beyond. This Ta_2O_5/HSG capacitor technology consists of the surface treatment of storage poly-Si, the cyclic Ta_2O_5 deposition, and the fully planarized PMD(pre-metal dielectrics) process. The excellent electrical properties of the Ta_2O_5 /HSG capacitor technology have been achieved in 1Gbit DRAM. The refresh time and the package level reliability tests in 0.32 μm DRAM demonstrated that the Ta_2O_5 capacitor technology in this work can be applied to DRAM mass products and is reliable.
- 社団法人電子情報通信学会の論文
- 1999-07-23
著者
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Kim Chung-tae
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Kim Min-soo
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Kim S‐h
Dept. Of Semiconductor Science Wonkwang University
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Park Kun-sang
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Kyong-min
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Kim C‐t
Hyundai Electronics Ind. Co. Ltd. Kyoungki‐do Kor
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PARK Ki-Seon
Memory Research and Development Division, Hynix Semiconductor Inc.
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Park Ki-seon
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Kim Chan
Memory R & D Division, Hyundai Electronics Industries Co. Ltd.
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Lee Sang-Kyoo
Memory R & D Division, Hyundai Electronics Industries Co. Ltd.
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Koh Yo-Hwan
Memory R & D Division, Hyundai Electronics Industries Co. Ltd.
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Bae Nam-Jin
APEX Co Ltd
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Kim Sang-Ho
APEX Co Ltd
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Kim Myung-soo
Ldi Process Architecture Lsi Development Team System-lsi Division Semiconductor Business Samsung Ele
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Lim Chan
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Koh Yo-hwan
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Lee Sang-kyoo
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Kim Kyong-min
Memory R & D Division Hynix Semiconductor Inc.
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