EVALUATION OF SOI WAFERS USING C-V CHARACTERISTICS OF THIN-FILM MOS CAPACTOR
スポンサーリンク
概要
- 論文の詳細を見る
Various types of SOI (Silicon-on-Insulator) wafers have been evaluated using C-V technique to measure thickness of silicon film. SOI film thickness mapping was made on various types of SOI wafers. Also, threshold voltage variation across a wafer was correlated with SOI film thickness variation which is extracted from measured C-V characteristics. It was found that SOI wafers based on a bonding technology showed higher film thickness variation than SIMOX (Separated by Implanted Oxygen) SOI wafers. There exists a relationship among SOI film thickness, threshold voltage, and channel doping.
- 社団法人電子情報通信学会の論文
- 1997-07-25
著者
-
Lee Jong-wook
Silicon Systems Research Labs.
-
Lee J‐w
Technology Development Semiconductor R&d Center Samsung Electronics Co.
-
Oh Min-rok
Semiconductor Research Division Hyundai Electronics Industries Co. Ltd.
-
Koh Yo-hwan
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
-
Yang Ji-woon
Semiconductor Research Division Hyundai Electronics Industries Co. Ltd.
-
Lee Won-chang
Semiconductor Research Division Hyundai Electronics Industries Co. Ltd.
-
Lee Jong-Wook
Advanced Device Dept. 2, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
-
Yang Ji-Woon
Advanced Device Dept. 2, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
-
Lee Won-Chang
Advanced Device Dept. 2, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
-
Oh Min-Rok
Advanced Device Dept. 2, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
-
Koh Yo-Hwan
Advanced Device Dept. 2, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
関連論文
- Endurance Characteristics and Degradation Mechanism of Polysilicon Thin Film Transistor EEPROMs with Electron Cyclotron Resonance N_2O-Plasma Gate Oxide
- High-Performance EEPROMs Using N- and P-Channel Poly-Si TFTs with ECR N2O-Plasma Oxide
- Effect of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown Using Electron Cyclotron Resonence N_2O-Plasma
- Short Channel Effects in N- and P-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin Electron Cyclotron Resonance N_2O-Plasma Gate Dielectric
- Short-Channel Effects in N- and P-Channel Polysilicon Thin Film Transistors with Very Thin ECR N_2O-Plasma Gate Dielectrics
- Highly Reliable Interpoly Oxide Using ECR N_2O-Plasma for Next Generation Flash Memory
- The Effect of Al/Pt Interface Reaction on Lead-zirconate-titanate Capacitor and the Optimization of Via Contact for Double Metal Ferroelectric RAM
- An Optimized Via Contact Scheme of FeRAM for Double-Level Metallization and Beyond
- Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
- Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
- Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology
- Effects of buried oxide stress on thin-film silicon-on-insulator metal-oxide-semiconductor field-effect-transistor
- BC(Body-Contacted) SOI-CMOS Technology and Its Application to High Density Memory
- Effects of buried oxide stress on thin-film silicon-on-insulator metal-oxide-semiconductor field-effect-transistor
- EVALUATION OF SOI WAFERS USING C-V CHARACTERISTICS OF THIN-FILM MOS CAPACTOR
- EVALUATION OF SOI WAFERS USING C-V CHARACTERISTICS OF THIN-FILM MOS CAPACTOR
- ELFIN (ELevated Field INsulator) and SEP (S/D Elevated by Poly-Si Plugging) Process for Ultra-Thin SOI MOSFETs
- ELFIN (ELevated Field INsulator) and SEP (S/D Elevated by Poly-Si Plugging) Process for Ultra-Thin SOI MOSFETs