Lee J‐w | Technology Development Semiconductor R&d Center Samsung Electronics Co.

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著作論文

Endurance Characteristics and Degradation Mechanism of Polysilicon Thin Film Transistor EEPROMs with Electron Cyclotron Resonance N_2O-Plasma Gate Oxide
High-Performance EEPROMs Using N- and P-Channel Poly-Si TFTs with ECR N2O-Plasma Oxide
Effect of Bottom Polysilicon Doping on the Reliability of Interpoly Oxide Grown Using Electron Cyclotron Resonence N_2O-Plasma
Short Channel Effects in N- and P-Channel Polycrystalline Silicon Thin Film Transistors with Very Thin Electron Cyclotron Resonance N_2O-Plasma Gate Dielectric
Short-Channel Effects in N- and P-Channel Polysilicon Thin Film Transistors with Very Thin ECR N_2O-Plasma Gate Dielectrics
Highly Reliable Interpoly Oxide Using ECR N_2O-Plasma for Next Generation Flash Memory
The Effect of Al/Pt Interface Reaction on Lead-zirconate-titanate Capacitor and the Optimization of Via Contact for Double Metal Ferroelectric RAM
An Optimized Via Contact Scheme of FeRAM for Double-Level Metallization and Beyond
BC(Body-Contacted) SOI-CMOS Technology and Its Application to High Density Memory
Effects of buried oxide stress on thin-film silicon-on-insulator metal-oxide-semiconductor field-effect-transistor
EVALUATION OF SOI WAFERS USING C-V CHARACTERISTICS OF THIN-FILM MOS CAPACTOR
EVALUATION OF SOI WAFERS USING C-V CHARACTERISTICS OF THIN-FILM MOS CAPACTOR
ELFIN (ELevated Field INsulator) and SEP (S/D Elevated by Poly-Si Plugging) Process for Ultra-Thin SOI MOSFETs
ELFIN (ELevated Field INsulator) and SEP (S/D Elevated by Poly-Si Plugging) Process for Ultra-Thin SOI MOSFETs

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