Properties of GaN MIS capacitors using Al_2O_3 as gate dielectric deposited by Remote Plasma Atomic Layer Deposition(Session1: Compound Semiconductor Devices)

概要

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Al_2O_3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethylaluminum (TMA) precursor and oxygen radicals in the temperature range of 25〜500℃. Growth rate per cycle was varied with substrate temperature from 1.8Å/cycle at 25℃ to 0.8Å/cycle at 500℃ Excellent electrical properties of GaN MIS capacitor were obtained at 300℃, in terms of low electrical leakage current density (〜10^<-10>A/cm^2 at 1MV) at room temperature, high dielectric constant of 8.6 with the thinner oxide thickness of 12nm Interface trap density (D_<it>) was estimated using high Frequency C-V method at 300℃. These results show that RPALD technique is an excellent choice to deposit high quality Al_2O_3 as a gate dielectric in GaN based devices.
社団法人電子情報通信学会の論文
2008-07-02