Properties of LiNbO_3 thin films fabricated by CSD (Chemical Solution Decomposition) method (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

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Ferroelectric capacitors with LiNbO_3 film were fabricated using CSD method and demonstrated nonvolatile memory operations of the capacitors. C-axis oriented LiNbO_3 (006) peak was obtained from the prepared LiNbO_3/Pt/Ti/SiO_2/Si and LiNbO_3/p-Si (100) structures. At the annealing temperature of 800℃, the maximum LN (006) peak was observed. The capacitance in Pt/LiNbO_3/Pt/Ti/SiO_2/Si structure shows hysteresis behavior like a butterfly shape and this result indicates clearly that the dielectric films have ferroelectric properties. The dielectric constant of the LiNbO_3 films calculated from the capacitance at the accumulation region was about 27. Typical gate leakage current density of the MFS capacitor was the order of 10^<-7> A/cm^2 at the range of within ±300 kV/cm. The typical measured remnant polarization (2Pr) and coercive field (Ec) values were about 0.5μC/cm^2 and 115 kV/cm, resoectively.
社団法人電子情報通信学会の論文
2003-06-23