Fabrication and properties of metal-ferroelectric-semiconductor devices using ferroelecttic VF2-TrFE copolymer films (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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Metal-ferroelectric-semiconductor structures with ferroelectric vinylidene fluoride-trifluoroethylene (VF_2-TrFE) copolymer films were fabricated using spin coating method and demonstrated nonvolatile memory operations. VF_2-TrFE copolymer films were deposited on Si wafer at a spin rate of 2000〜4000 rpm and dried on hot plate in air at 70℃. And then VF_2-TrFE copolymer films were annealed in a vacuum ambient at 150℃. X-ray diffraction results showed that the VF_2-TrFE films on Si substrates had β-phase of copolymer structures. The MFS capacitor on a p-type Si(100) wafer had a hysteresis curve with a clockwise rotation, which indicated ferroelectric polarization switching behavior. The dielectric constant was about 9. The typical measured remnant polarization (Pr) and coercive field (Ec) values were about 5.8 μC/cm^2 and 470 kV/cm, respectively. In case of fatigue, there was good polarization degradation property up to about 10^<11> switching cycles using 1 MHz square wave form at ±550kV/cm. Typical gate leakage current density of the MFS capacitor was the order of 10^6 A/cm^2 at the range of within 1 MV/cm, while the leakage current density of the MFIS capacitor was less than 2×10^<-8> A/cm^2 order in the same electric field.
社団法人電子情報通信学会の論文
2007-06-18