Composition and Electrical Properties of Metallic Ru Thin Films Deposited Using Ru(C_6H_6)(C_6H_8) Precursor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-11-30
著者
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NO Kwangsoo
Department of Materials Science and Engineeing, KAIST
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No Kwangsoo
Department Of Material Science And Engineering Korea Advanced Institute Of Science And Technology
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Roh Jae-sung
Hynix Semiconductor Inc.
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CHOI Jongwan
Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology
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CHOI Youngmin
Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology
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HONG Jongin
Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology
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TIAN Huyong
Department of Material Science and Engineering, Korea Advanced Institute of Science and Technology
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KIM Younsoo
Hynix Semiconductor Inc.
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CHUNG Taek-Mo
Advanced Materials Division, Korea Research Institute of Chemical Technology
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OH Young
Advanced Materials Division, Korea Research Institute of Chemical Technology
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KIM Yunsoo
Advanced Materials Division, Korea Research Institute of Chemical Technology
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KIM Chang
Advanced Materials Division, Korea Research Institute of Chemical Technology
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Chung Taek-mo
Advanced Materials Division Korea Research Institute Of Chemical Technology
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Hong Jongin
Department Of Material Science And Engineering Korea Advanced Institute Of Science And Technology
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Hong Jongin
Department Of Material Science And Engineering Kaist
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Tian Huyong
Department Of Material Science And Engineering Korea Advanced Institute Of Science And Technology
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Choi Youngmin
Department Of Material Science And Engineering Korea Advanced Institute Of Science And Technology
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Choi Jongwan
Department Of Material Science And Engineering Korea Advanced Institute Of Science And Technology
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Oh Young
Advanced Materials Division Korea Research Institute Of Chemical Technology
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Kim Chang
Advanced Materials Division Korea Research Institute Of Chemical Technology
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