Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask
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概要
- 論文の詳細を見る
We investigated dry etching methods for the patterning of nanosized Ge2Sb2Te5 (GST) patterns using high-density helicon plasma etching system. It was found that GST patterns of 10-nm-order size could not be formed in a suitable way owing to the damage of undesirable under-cut when the etching process was performed in gas mixtures of Ar/Cl2 using a SiO2 hard mask. In this work, a hard mask of TiN was therefore chosen for employing a CF4-based gas mixture for GST etching, in which the gas mixing ratios of Ar/Cl2 and Ar/CF4 were carefully controlled for TiN and GST patterning processes, respectively. Using these optimized patterning conditions, tens-of-nanometer-sized GST line and square-dot patterns could be successfully obtained with good profiles and uniformity.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-10-25
著者
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Lee Seung-yun
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yoon Sung-min
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Nam-yeal
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Park Young-sam
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Choi Kyu-jeong
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yu Byoung-gon
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Yoon Sung-Min
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
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Lee Seung-Yun
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea
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