Electrical and Chemical Properties of Photo-Cross-Linked Polymeric Insulating Materials
スポンサーリンク
概要
- 論文の詳細を見る
Photosensitive polymeric insulating films, which were prepared by mixing host polymers and a photosensitizer, exhibit high chemical resistance and excellent electrical properties. These polymer films formed by the spin-coating method were exposed through a mask to patterned radiation of UV light. The nonexposed areas of these films were dissolved by an appropriate solvent. Leakage current densities for these films are very low, approximately $5 \times 10^{-7} \sim 3 \times 10^{-8}$ A/cm2 at a bias of 10.0 V. These polymer insulators are particularly suitable for plastic-based electronic device applications.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-03-10
著者
-
YOON Sung-Min
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
-
SUH Kyung
Basic Research Laboratory, Electronics and Telecommunications Research Institute
-
Kim Gi
Basic Research Lab. Electronics And Teleconumunications Research Institute
-
Kim Chul
Basic Research Laboratory Electronics And Telecommunications Research Institute
-
Yoon Sung-Min
Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305-350, Korea
-
Suh Kyung
Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305-350, Korea
-
Kim Gi
Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305-350, Korea
関連論文
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
- Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Electrical and Chemical Properties of Photo-Cross-Linked Polymeric Insulating Materials
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
- Organic Thin-Film Transistors Fabricated on Plastic Substrates with a Polymeric Gate Dielectrics
- Organic Thin-Film Transistors Fabricated on Plastic Substrates with a Polymeric Gate Dielectrics
- Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures
- Longevity of Plastic-Based Organic Light-Emitting Devices by Means of Protective Oils as Passivation Layer
- Electrical and Chemical Properties of Photo-Cross-Linked Polymeric Insulating Materials