Electrical and Chemical Properties of Photo-Cross-Linked Polymeric Insulating Materials

スポンサーリンク

概要

著者

関連論文

Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
Plastic-based organic thin-film transistors with photo-cured nanocomposite insulators (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Plastic-based organic thin-film transistors with photo-cured nanocomposite insulators (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
Electrical and Chemical Properties of Photo-Cross-Linked Polymeric Insulating Materials
有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価(薄膜(Si,化合物,有機,フレキシブル)機能デバイス・材料・評価技術及び一般)
有機強誘電体P(VDF-TrFE)と無機酸化物半導体IGZOを用いた強誘電体ゲート薄膜トランジスタの作製と評価(薄膜(Si,化合物,有機,フレキシブル)機能デバイス・材料・評価技術及び一般)
Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures
Organic Thin-Film Transistors Fabricated on Plastic Substrates with a Polymeric Gate Dielectrics
Organic Thin-Film Transistors Fabricated on Plastic Substrates with a Polymeric Gate Dielectrics
Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi,La)4Ti3O12/ONO/Si Structures
Longevity of Plastic-Based Organic Light-Emitting Devices by Means of Protective Oils as Passivation Layer
Electrical and Chemical Properties of Photo-Cross-Linked Polymeric Insulating Materials

もっと見る

スポンサーリンク