Plastic-based organic thin-film transistors with photo-cured nanocomposite insulators (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

概要

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Photosensitive nanocomposite materials, which were prepared by blending high-dielectric aluminum tin oxide (ATO; average particle diameter, 110±10nm) into a novel photo-curable blend (P-NA0) having a hydrophobic nature, exhibit excellent electrical, physical, and chemical properties as dielectrics. Dispersing ATO nanoparticles in the pristine P-NA0 film did not cause any clusters that may induce the current leakage and rough surface. It was observed that dielectric constants increased with increasing the ATO content. In order to explore the effects of our nanocomposite insulators, pentacene as a p-type semiconductor was deposited on various photo-cured nanocomposites, and the performance of organic thin-film transistors was systematically investigated.
社団法人電子情報通信学会の論文
2007-06-18