LEE Nam-Yeal | Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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概要
関連著者
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LEE Nam-Yeal
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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RYU Sang-OUK
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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Yoon Sung-min
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Ryu S‐o
Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)
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Lee Nam-yeal
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Nam-yeal
Basic Research Laboratory Electronics And Telecommunications Research Institute (etri)
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Lee Nam-yeal
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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YOON Sung-Min
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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YU Byoung-Gon
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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Yu B‐g
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Choi K‐j
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Lee Seung-yun
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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YOON Sung-Min
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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CHOI Kyu-Jeong
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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LEE Nam-Yeal
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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PARK Young-Sam
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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YU Byoung-Gon
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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PARK Young-Sam
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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LEE Seung-Yun
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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Yu Byoung-gon
Micro-electronics Laboratory Electronics And Telecommunications Research Institute
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Park Young-sam
It Convergence And Component Laboratory Electronics And Telecommunications Research Institute
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Ryu Sang-ouk
Basic Research Laboratory Electronics & Telecommunications Research Institute (etri)
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Cho Seong-mok
Department Of Ceramic Engineering Yonsei University
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Cho K‐i
Etri Daejon Kor
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LEE Seung-Yun
IT Convergence and Component Laboratory, Electronics and Telecommunications Research Institute
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Lee Won-jae
Electronics And Telecommunications Research Institute
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CHOI Kyu-Jeong
Basic Research Laboratory, Electronics & Telecommunications Research Institute (ETRI)
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KANG Myung-Jin
Department of Ceramic Engineering, Yonsei University
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CHOI Se-Young
Department of Ceramic Engineering, Yonsei University
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WUTTIG Matthias
Physikalisches Institut der RWTH Aachen
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CHOI Kyu-Jenong
Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI)
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Kang Myung-jin
Department Of Ceramic Engineering Yonsei University
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Yoon Soon-Gil
Department of Materials Engineering, Chungnam National University
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You In-kyu
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
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Choi Se-young
Department Of Ceramic Engineering Yonsei University
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CHO Seong-Mok
Basic Research Laboratory, Electronics and Telecomunications Research Institute (ETRI)
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SHIN Woong-Chul
Basic Research Laboratory, Electronics and Telecomunications Research Institute (ETRI)
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CHOI Kyu-Jung
Basic Research Laboratory, Electronics and Telecomunications Research Institute (ETRI)
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KIM Kwi-Dong
Basic Research Laboratory, Electronics and Telecomunications Research Institute (ETRI)
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Kim Kwi-dong
Basic Research Laboratory Electronics And Telecomunications Research Institute (etri)
著作論文
- Lower Power and Higher Speed Operations of Phase-Change Memory Device Using Antimony Selenide (Sb_xSe_)
- Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Phase Formations and Electrical Properties of Bi_La_Ti_3O_ and Sm-Doped Bi_La_Sm_Ti_3O_ Thin Films with Annealing Temperature
- Material Design Schemes for Single-Transistor-Type Ferroelectric Memory Cells Using Pt/(Bi, La)_4Ti_3O_12/ONO/Si Structures