Comparative Analysis of VO_2 Thin Films Prepared on Sapphire and SiO_2/Si Substrates by the Sol-Gel Process
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-02-15
著者
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Kim Bong-jun
Etri
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KANG Kwang-Yong
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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CHAE Byung-Gyu
Basic Research Laboratory, ETRI
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KIM Hyun-Tak
Basic Research Laboratory, ETRI
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YUN Sun-Jin
Basic Research Laboratory, ETRI
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KIM Bong-Jun
Basic Research Laboratory, ETRI
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LEE Yong-Wook
Basic Research Laboratory, ETRI
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- 20pWG-13 Separation of Mott metal-insulator transition and structural phase transition in VO_2
- Comparative Analysis of VO_2 Thin Films Prepared on Sapphire and SiO_2/Si Substrates by the Sol-Gel Process
- 28aUE-9 Mott transition observed by micro-Raman scattering in VO_2
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- Polarization-Insensitive Discrimination of Strain and Temperature Based on Long-Period Fiber Grating Inscribed on High-Birefringent Fiber Ended with Faraday Rotator Mirror
- Comparative Analysis of VO2 Thin Films Prepared on Sapphire and SiO2/Si Substrates by the Sol–Gel Process