Low-Shrinkage Spin-On Glass for Low Parasitic Capacitance Gap-Filling Process in Advanced Memory Devices
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概要
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A new low-dielectric-constant spin-on glass (SOG) with a k value of 2.4 has been developed for a gap-filling process in advanced memory devices. The low-shrinkage characteristic of the SOG during thermal curing provides capabilities of gap filling and planarizing as high as those of conventional reflowable SOGs. The low-shrinkage SOG has thermal stability up to 800 °C and chemical stability against diluted hydrofluoric acid, sulfuric acid--hydrogen peroxide, and amine-based solutions, which makes it possible to be used as an interlevel dielectric of memory devices. Tungsten and aluminum interconnects fabricated using the low-shrinkage SOG showed a parasitic capacitance 30% lower than those fabricated using silicon dioxide and a sufficiently long line-to-line dielectric breakdown lifetime. Taking advantage of the high chemical stability of the SOG, an all-wet damageless via-formation process using an amine-based photoresist stripper has been developed. By using the process, the low-shrinkage SOG can be applied to multilevel metallization.
- 2012-03-25
著者
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Torii Kazuyoshi
Central Research Laboratory Hitachi Lid.
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Ryuzaki Daisuke
Central Research Laboratory Hitachi Ltd.
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Sakurai Haruaki
Electronic Materials Business Sector, Hitachi Chemical Co., Ltd., Hitachi, Ibaraki 317-8555, Japan
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Yoshikawa Takahiro
Electronic Materials Business Sector, Hitachi Chemical Co., Ltd., Hitachi, Ibaraki 317-8555, Japan
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