Tetragonal High-T_c Superconductor in the System Ba_2Y(Cu<1-x>Ga_x)_3O_<7-δ>
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1987-12-20
著者
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Hiratani Masahiko
Central Research Laboratory Hitachi Ltd.
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ITO Yukio
Central Research Laboratory, Hitachi, Ltd.
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MIYAUCHI Katsuki
Central Research Laboratory, Hitachi, Ltd.
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KUDO Tetsuichi
Central Research Laboratory, Hitachi, Ltd.
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Kudo Tetsuichi
Central Research Laboratory Hitachi Ltd.
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Miyauchi K
Central Research Laboratory Hitachi Ltd.
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Ito Yukio
Central Research Laboratory Hitachi Ltd
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Miyauchi Katsuki
Central Research Laboratory Hitachi Ltd.
関連論文
- Tetragonal High-T_c Superconductor in the System Ba_2Y(CuGa_x)_3O_
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- Fabrication of Pd(Zr, Ti)O_3 Microscopic Capacitors by Electron Beam Lithography
- SrRuO_3 Thin Films Grown under Reduced Oxygen Pressure
- Orientation and Crystal Structure of SrTiO_3 Thin Films Prepared by Pulsed Laser Deposition
- Electrical Characteristics of HoBa_2Cu_3O_-La_Ba_Cu_3O_-HoBa_2Cu_3O_ Junctions with Planar-Type Structures
- Deposition Profile of RF-Magnetron-Sputtered BaTiO_3 Thin Films
- Preparation of YBa_2Cu_3O_ Superconducting Thin Films by RF-Magnetron Sputtering
- Metallugical Analysis of Mix-Phase Y-Ba-Cu Oxides
- Application of Gd_2O_2S Ceramic Scintillator for X-Ray Solid State Detector in X-Ray CT : Techniques, Instrumentations and Measurement
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- Effect of Annealing in High-T_c Superconducting Y-Ba-Cu Oxide
- Josephson Point Contact Using High-Critical-Temperature Oxide-Superconductors
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- Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
- Conformal Platinum Electrodes Prepared by Chemical Vapor Deposition Using a Liquid MeCpPtMe_3 Precursor in an Oxidizing Atmosphere
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- A 500℃ fabrication process for MIM capacitors-based on a Ta_2O_5/Nb_2O_5 bilayer with high permittivity-for DRAM and SoC applications
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- Some Crystallographic, Electric and Thermochemical Properties of the Perovskite-Type La_M_xNiO_3(M: Ca, Sr and Ba)
- Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics
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