TANABE Masamichi | Musashino Office, Hitachi Device Engineering, Co., Ltd.
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概要
関連著者
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TANABE Masamichi
Musashino Office, Hitachi Device Engineering, Co., Ltd.
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Tanabe Masamichi
Musashino Office Hitachi Device Engineering Co. Ltd.
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SHIMAMOTO Hiromi
Musashino Office, Hitachi Device Engineering, Co., Ltd.
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WASHIO Katsuyoshi
Central Research Laboratory, Hitachi, Ltd.
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Shimamoto H
Musashino Office Hitachi Device Engineering Co. Ltd.
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Shimamoto Hiromi
Musashino Office Hitachi Device Engineering Co. Ltd.
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Washio K
Central Research Laboratory Hitachi Ltd.
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Washio Katsuyoshi
Central Research Laboratory Hitachi Ltd.
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ONAI Takahiro
Central Research Laboratory, Hitachi, Ltd.
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Onai T
Central Research Laboratory Hitachi Ltd.
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Onai Takahiro
Central Research Laboratory Hitachi Ltd.
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OHUE Eiji
Central Research Laboratory, Hitachi, Ltd.
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Ohue Eiji
Central Research Laboratory Hitachi Ltd.
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Ohue E
Central Research Laboratory Hitachi Ltd.
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Nakamura T
Fujitsr Ltd. Akiruno-shi Jpn
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NAKAMURA Tohru
Central Research Laboratory, Hitachi, Ltd.
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Shimamoto Hiromi
Central Research Laboratory Hitachi Ltd.
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Washio Katsuyoshi
The Central Research Laboratory Hitachi Ltd.
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Onai Takahiro
The Central Research Laboratory Hitachi Ltd.
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Oda K
Telecom Engineering Center
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Oda Katsuya
Central Research Laboratory Hitachi Ltd.
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Nakamura Tohru
Central Research Lab. Hitachi Ltd.
著作論文
- Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)
- High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology (Special Issue on High-Frequency/speed Devices in the 21st Century)
- DC and AC Performances in Selectively Grown SiGe-Base HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)