Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)

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概要

• 論文の詳細を見る

• A simplified distribution base resistance model (SDM) is proposed to identify each component of the base resistance and determine the dominant. This model divides the parasitic base resistance into one straight path and two surrounding paths. It is clarified that the link base resistance is dominant in a short emitter and the surrounding polysilicon base electrode resistance is dominant in a long emitter. In the SDM, the distance of the link base is reduced to halt with metal silicide as the extrinsic base electrode, the base resistance will be reduced to 75%.

• 社団法人電子情報通信学会の論文
• 1996-02-25

著者

• TANABE Masamichi

  Musashino Office, Hitachi Device Engineering, Co., Ltd.

• Shimamoto Hiromi

  Central Research Laboratory Hitachi Ltd.

• Tanabe Masamichi

  Musashino Office Hitachi Device Engineering Co. Ltd.

• Washio Katsuyoshi

  The Central Research Laboratory Hitachi Ltd.

• Onai Takahiro

  The Central Research Laboratory Hitachi Ltd.

関連論文

• Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)
• High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology (Special Issue on High-Frequency/speed Devices in the 21st Century)
• DC and AC Performances in Selectively Grown SiGe-Base HBTs (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors (Special Issue on Microelectronic Test Structure)

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