New Test Structures for Evaluating the Scaling Limit of a Narrow U-Groove Isolation Structure (Special Issue on Microelectronic Test Structures)

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概要

• 論文の詳細を見る

• New test structures for evaluating isolation capacitance (C_<TS>) and isolation breakdown voltage (BV_<CCO>) have been developed. Using these test structures, we examined the scaling limit of the width and the structure of narrow isolation U-grooves for high-speed and high-density LSIs. We separated the capacitance C_<TS> into two components, C_<TSS> (bottom component) and C_<TSL> (peripheral component), and analyzed the effect of the device structure (isolation width and filling materials) on C_<TS>. We found tha the minimum width of the isolation U-groove is especially limited by the increased isolation capacitance between the neighboring N^+ buried layers. The minimum width is about 0.31μm even when SiO_2 is used as a filling material. So we developed an effective method to overcome this limitation. Use of a double-trench structure and/or an SOI substrate meet the requirement. A double-trench structure can reduce C_<TS> by more than 50%, while SOI substrates gives reduced C_<TS>, high BV_<CCO>, high α-ray immunity, and reduced process steps.

• 一般社団法人電子情報通信学会の論文
• 1999-04-25

著者

• Hashimoto Takashi

  Device Development Center Hitachi Ltd.

• TAMAKI Yoichi

  Device Development Center, Hitachi Ltd.

• Tamaki Yoichi

  Device Development Center Hitachi Ltd.

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• New Test Structures for Evaluating the Scaling Limit of a Narrow U-Groove Isolation Structure (Special Issue on Microelectronic Test Structures)

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