Copper Wires for High Speed Logic LSI Prepared by Low Pressure Long Throw Sputtering Method
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概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2002-07-01
著者
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Hashimoto Takashi
Device Development Center, Hitachi, Ltd.
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YAMAGUCHI Hizuru
Device Development Center, Hitachi Ltd.
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Ohashi Naofumi
Device Development Center Hitachi Ltd.
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SAITO Tatsuyuki
Device Development Center, Hitachi Ltd.
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FUJIWARA Tsuyoshi
Device Development Center, Hitachi Ltd.
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Yamaguchi Hizuru
Device Development Center Hitachi Ltd.
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Saito Tatsuyuki
Device Development Center Hitachi Ltd.
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Fujiwara Tsuyoshi
Device Development Center Hitachi Ltd.
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Hashimoto Takashi
Device Development Center Hitachi Ltd.
関連論文
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- HCI-Free Selective Epitaxial SiGe Growth by LPCVD for 80-GHz BiCMOS Production
- Dependence of Time-Dependent Dielectric Breakdown Lifetime on NH_3-Plasma Treatment in Cu Interconnects
- Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection
- Dielectric Breakdown and Light Emission in Copper Damascene Structure under Bias-Temperature Stress
- Dependence of Time-Dependent Dielectric Breakdown Lifetime on the Structure in Cu Metallization
- Copper Wires for High Speed Logic LSI Prepared by Low Pressure Long Throw Sputtering Method
- A16-087 PROFILE SIMULATIONS OF ELECTROPLATING AND CHEMICAL MECHANICAL POLISHING
- Slurry Chemical Corrosion and Galvanic Corrosion during Copper Chemical Mechanical Polishing
- Molecular Adsorption on Ultrafine Precious Metal Particles Studied by Density Functional Calculation
- Impact of Self-Aligned Metal Capping Method on Submicron Copper Interconnections
- Impact of Self-Aligned Metal Capping Method on Submicron Copper Interconnections
- New Test Structures for Evaluating the Scaling Limit of a Narrow U-Groove Isolation Structure (Special Issue on Microelectronic Test Structures)
- Fast Computation of Microscale Temperature Distribution in LSI Chips
- Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection