A16-087 PROFILE SIMULATIONS OF ELECTROPLATING AND CHEMICAL MECHANICAL POLISHING
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概要
- 論文の詳細を見る
Changes of film profiles in micro trenches on silicon substrates during electroplating and changes of surface profile during chemical mechanical polishing (CMP) were numerically simulated by using a finite-difference model and a finite-element model. The calculated profiles agree with the experimentally measured ones. In both cases, the relationship between changes of profiles and parameters was obtained from these simulations. It can therefore be concluded from these results that the proposed models can be used to effectively optimize electroplating and CMP conditions.
- 一般社団法人日本機械学会の論文
- 2003-11-30
著者
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HIRASAWA Shigeki
Mechanical Engineering Research Laboratory, Hitachi, Ltd.
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SAITO Tatsuyuki
Device Development Center, Hitachi Ltd.
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Saito Tatsuyuki
Device Development Center Hitachi Ltd.
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Hirasawa Shigeki
Mechanical Engineering Research Laboratory Hitachi Ltd.
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MITANI Shinichiro
Device Development Center, Hitachi Ltd.
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Mitani Shinichiro
Device Development Center Hitachi Ltd.
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