Sugimoto Yoshimasa | Opto-electronics Research Laboratories Nec Corporation

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著作論文

650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
Record Low Threshold Current in Microcavity Surface-Emitting Laser
Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor
GaAs Surface Cleaning/Etching Using Plasma-Dissociated Cl Radical
Smooth and Vertical InP Reactive Ion Beam Etching with Cl_2 ECR Plasma
Switching Experiments with a Mach-Zehnder-type All-Optical Device Based on the Band-Filling Nonlinearity in a GaAs Waveguide and Reduction in Its Relaxation Time
Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application

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