Switching Experiments with a Mach-Zehnder-type All-Optical Device Based on the Band-Filling Nonlinearity in a GaAs Waveguide and Reduction in Its Relaxation Time
スポンサーリンク
概要
- 論文の詳細を見る
We examine switching characteristics of an all-optical device in Mach-Zehnder configuration, that is based on the band-filling nonlinearity in a GaAs waveguide. Switching waveforms corresponding to π(full switching), 2π, and 2.7π have been obtained and they were compared with theoretical curves. Good agreement has been observed between experimental and theoretical results. The control light pulse energy required for full switching is estimated to be approximately 6 pJ. The switching speed of the above device is limited by the slow relaxation time of photogenerated carriers. In order to reduce the switch-off time determined by the carrier relaxation, we investigated a method which involves application of a DC electric field across the thin core layer of the waveguide in order to sweep photogenerated carriers away from the light-guiding region and effectively reduce the relaxation time. With this technique, the usual switching speed of approximately 1 ns was reduced to approximately 24 ps.
- 社団法人応用物理学会の論文
- 1994-01-15
著者
-
Sugimoto Yoshimasa
Opto-Electronics Research Laboratories, NEC Corporation
-
HAMAO Noboru
Opto-Electronics Research Laboratories, NEC Corporation
-
Hamao N
Opto-electronics Research Laboratories Nec Corporation:(present Address)engineering Planning And Coo
-
Hamao Noboru
Opto-electronics Research Laboratories Nec Corporation
-
Sugimoto Yoshimasa
Opto-electronics Research Laboratories Nec Corporation
-
TAJIMA Kazuhito
Opto-Electronics Research Laboratories, NEC Corporation
-
NAKAMURA Shigeru
Opto-Electronics Research Laboratories, NEC Corporation
-
Tajima Kazuhito
Opto-electronics Research Laboratories Nec Corp.
-
Tajima Kazuhito
Opto-electronics Research Laboratories Nec Corporation
-
Nakamura Shigeru
Opto-electronics Research Laboratories Nec Corporation
関連論文
- 650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
- Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
- Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
- Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
- Record Low Threshold Current in Microcavity Surface-Emitting Laser
- Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor
- GaAs Surface Cleaning/Etching Using Plasma-Dissociated Cl Radical
- Smooth and Vertical InP Reactive Ion Beam Etching with Cl_2 ECR Plasma
- Very Low Threshold AlGaAs/GaAs Quantum Well Lasers Fabricated by Self-Aligned Impurity Induced Disordering
- Switching Experiments with a Mach-Zehnder-type All-Optical Device Based on the Band-Filling Nonlinearity in a GaAs Waveguide and Reduction in Its Relaxation Time
- High Speed Response in Optoelectronic Gated Thyristor
- Large Phase Shifts due to the X(^2) Cascading Nonlinearity in Large Walk-off and Loss Regimes in Semiconductors and Other Dispersive Materials
- Analysis of Subpicosecond Full-Switching with a Symmetric Mach-Zehnder All-Optical Switch
- All-Optical Switch with Switch-Off Time Unrestricted by Carrier Lifetime
- Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application