Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application

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概要

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• Chlorine-based dry etching of III/V compound semiconductors for optoelectronic applications has been reviewed. The advantages of the ultrahigh-vacuum (UHV)-based electron cyclotron resonance (ECR)-plasma reactive ion beam etching (RIBE) over conventional RF-plasma reactive ion etching (RIE) were emphasized as the capability to use carbon-free, chlorine (Cl2) gas plasmas, controllability of ion energies and compatibility with other UHV-based chambers such as a molecular beam epitaxy (MBE) chamber. The RIBE technique was shown to exhibit excellent laser diode performances, such as extremely low threshold-current, high polarization-controllability and a lifetime of more than 3000 h for structures with more than 1-µm-wide etched-mesa width. The degree of etching-induced damage was evaluated in terms of the nonradiative surface recombination velocity Sr and the possibilities of practical applications of the dry-etched devices were discussed using the Sr values.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-02-15

著者

• Yoshikawa Takashi

  Opto-Electronics Research Laboratories, NEC Corporation

• Nambu Yoshihiro

  Opto-electronics Research Laboratories Nec Corporation

• ASAKAWA Kiyoshi

  Tsukuba Laboratory, The Femtosecond Technology Research Association

• KOHMOTO Shigeru

  Tsukuba Laboratory, The Femtosecond Technology Research Association

• Sugimoto Yoshimasa

  Opto-electronics Research Laboratories Nec Corporation

• Kohmoto Shigeru

  Tsukuba Laboratory, The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba 300-26, Japan

• Sugimoto Yoshimasa

  Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba 305, Japan

• Nambu Yoshihiro

  Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba 305, Japan

関連論文

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• Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
• Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
• Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
• Record Low Threshold Current in Microcavity Surface-Emitting Laser
• Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor
• GaAs Surface Cleaning/Etching Using Plasma-Dissociated Cl Radical
• Smooth and Vertical InP Reactive Ion Beam Etching with Cl_2 ECR Plasma
• Switching Experiments with a Mach-Zehnder-type All-Optical Device Based on the Band-Filling Nonlinearity in a GaAs Waveguide and Reduction in Its Relaxation Time
• Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application

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