KOBAYASHI Kohroh | Opto-Electronics Research Labs., NEC Corporation
スポンサーリンク
概要
関連著者
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KOBAYASHI Kohroh
Opto-Electronics Research Labs., NEC Corporation
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Mito Ikuo
Opto-electronics Research Laboratories Nec Corporation
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Kobayashi Kohroh
Opto-electronics Research Laboratories Nec Corporation
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Usui Akira
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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MITO Ikuo
Opto-Electronics Research Labs., NEC Corporation
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USUI Akira
Fundamental Research Laboratories, NEC Corporation
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KOBAYASHI Kenichi
Opto-Electronics Research Laboratories, NEC Corporation
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NUMAI Takahiro
Opto-Electronics Research Laboratories, NEC Corporation
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YAMAGUCHI Masayuki
Opto-Electronics and High Frequency Device Research Laboratories, NEC Corporation
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Numai Takahiro
College Of Science And Engineering Ritsumeikan University
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Kato Yoshitake
Opto-electronics Research Laboratories Nec Corporation
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Numai Takahiro
Opto-electronics Research Laboratories Nec Corporation
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MATSUMOTO Takashi
Fundamental Research Labs., NEC Corporation
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INAI Motohiko
Opto-Electronics Research Labs., NEC Corporation
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WATANABE Hisatsune
Fundamental Research Labs., NEC Corporation
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YANASE Tomoo
Opto-Electronics Research Laboratories NEC Corporation
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NISHIMOTO Hiroyuki
Opto-Electronics Research Laboratories NEC Corporation
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USUI Akira
Basic Research Laboratories NEC Corporation
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Inai Motohiko
Opto-electronics Research Labs. Nec Corporation
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Usui Akira
Fundamental Res. Labs. Nec Corporation
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Watanabe Hisatsune
Fundamental Research Laboratories
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Yamaguchi Masayuki
Opto-electronics Research Laboratories Nec Corporation
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Yamaguchi Masayuki
Opto-electronics And High Frequency Device Research Laboratories Nec Corporation
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Kobayashi Kenichi
Opto-electronics Research Laboratories Nec Corporation
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KOBAYASHI Kohroh
Opto-Electronics Research Laboratories, NEC Corporation
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USUI Akira
Fundamental Research Labs., NEC Corporation
著作論文
- Room Temperature cw Operation of Visible InGaAsP Double Heterostructure Laser at 671 nm Grown by Hydride VPE
- VPE-Grown 1.3 μm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers
- A New Grating Fabrication Method for Phase-Shifted DFB LDs