Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1990-08-20

著者

• Akita K

  Optoelectronics Technology Research Laboratory

• Ohki Yoshimasa

  Optoelectronics Technology Research Laboratory

• Hidaka Hiroshi

  Optoelectronics Technology Research Laboratory

• Taneya M

  Devices Technology Research Laboratories Sharp Corporation

• Taneya Mototaka

  Central Research Laboratories Engineering Center Sharp Corporation

• HIRATANI Yuji

  Optoelectronics Technology Research Laboratory

• SUGIMOTO Yoshimasa

  Optoelectronics Technology Research Laboratory

• AKITA Kenzo

  Optoelectronics Technology Research Laboratory

• Sugimoto Y

  Department Of Research And Development Nichia Chemical Industries Ltd

• Taneya Mototaka

  Central Research Laboratories Corporate R & D Group Sharp Corporation

関連論文

• Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
• InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
• InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• 650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe
• Thermal Analysis of Laser-Emission Surface-Normal Optical Devices with a Vertical Cavity
• Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN
• Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
• Uniformity Improvement of Optical and Electrical Characteristics in Integrated Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity
• Record Low Threshold Current in Microcavity Surface-Emitting Laser
• Chlorine-Based Smooth Reactive Ion Beam Etching of Indium-Containing III-V Compound Semiconductor
• GaAs Surface Cleaning/Etching Using Plasma-Dissociated Cl Radical
• Smooth and Vertical InP Reactive Ion Beam Etching with Cl_2 ECR Plasma
• Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
• Fine Pattern Formation of Gallium Arsenide by In Situ Electron-Beam Lithography Using an Ultrathin Surface Oxide as a Resist
• Electron-Beam-Induced Cl_2 Etching of GaAs
• High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
• Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
• Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography
• Phased-Array with the "YY" Shaped Symmetrically Branching Waveguide (SBW)
• Analysis of GaAs MOMBE Reactions by Mass Spectrometry
• Chemically Assisted Ion Beam Etching of GaAs/AlGaAs Using Chlorine Ions
• Temperature Dependence of the Reflected Trimethylgallium Flux Intensity from a GaAs Surface in Metal-Organic Molecular Beam Epitaxy Measured by Mass Spectrometry

もっと見る 閉じる

スポンサーリンク