Temperature Dependence of the Reflected Trimethylgallium Flux Intensity from a GaAs Surface in Metal-Organic Molecular Beam Epitaxy Measured by Mass Spectrometry

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概要

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• Desorbed species from a substrate in metal-organic molecular beam epitaxy of GaAs using trimethylgallium (TMG) and As_4 were studied by mass spectrometry. The observed Ga-containing species were mainly reflected TMG at all substrate temperatures ranging from 290 to 650℃. The TMG reflection decreased with an increase in the substrate temperature up to 520℃, indicating a decomposition of TMG on the GaAs surface. Above 520℃, the reflection of TMG increased and showed a small maximum at about 600℃, The temperature dependence of the reflected TMG accounts for the reported anomalous temperature dependence of the growth rate of GaAs by MOMBE.

• 社団法人応用物理学会の論文
• 1990-07-20

著者

• Ohki Y

  Optoelectronics Technology Research Laboratory

• Ohki Yoshimasa

  Optoelectronics Technology Research Laboratory

• HIRATANI Yuji

  Optoelectronics Technology Research Laboratory

• Hiratani Y

  Optoelectronics Technology Research Laboratory

関連論文

• Selective Area Epitaxy of GaAs Using GaAs Oxide as a Mask
• Analysis of GaAs MOMBE Reactions by Mass Spectrometry
• Temperature Dependence of the Reflected Trimethylgallium Flux Intensity from a GaAs Surface in Metal-Organic Molecular Beam Epitaxy Measured by Mass Spectrometry

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