Chemically Assisted Ion Beam Etching of GaAs/AlGaAs Using Chlorine Ions

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概要

• 論文の詳細を見る

• Chemically assisted ton beam etching of GaAs/AlGaAs has been studied using chlorine gas and chlorine/argon ions. The use of chlorine ions results in a very smooth surface after etching at an ton energy of 400 eV. By contrast, a porous surface appears when argon ions are used, unless the ion energy is increased to 700 eV. The smooth etching characteristics in the former case have been ascribed to the effective removal of Al_2O_3, which is formed on the AlGaAs surface and acts as a micromask, by chemically reactive chlorine ions.

• 社団法人応用物理学会の論文
• 1996-07-15

著者

• Taneya Mototaka

  Central Research Laboratories Engineering Center Sharp Corporation

• KAWANISHI Hidenori

  Central Research Laboratories, Sharp Corporation

• Kawanishi Hidenori

  Central Research Laboratories Corporate R & D Group Sharp Corporation

• SUZUKI Akira

  Central Research Laboratories, Corporate Research and Development Group, Sharp Corporation

• Taneya Mototaka

  Central Research Laboratories Corporate R & D Group Sharp Corporation

• MORIOKA Tatsuya

  Central Research Laboratories, Corporate R & D Group, Sharp Corporation

• SHIMONAKA Atsushi

  Central Research Laboratories, Corporate R & D Group, Sharp Corporation

• Shimonaka Atsushi

  Central Research Laboratories Corporate R & D Group Sharp Corporation

• Morioka Tatsuya

  Central Research Laboratories Corporate R & D Group Sharp Corporation

• Suzuki Akira

  Central Research Laboratories Corporate R & D Group Sharp Corporation

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