Electric Conductivity of the Zero-Gap Semiconducting State in α-(BEDT-TTF)_2I_3 Salt(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
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概要
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Electric conductivity that reveals the zero-gap semiconducting (ZGS) state has been investigated as a function of temperature T and lifetime τ in order to understand the ZGS state in a quarter-filled α-(BEDT-TTF)_2I_3 salt with four sites in the unit cell. By treating τ as a parameter and employing the one-loop approximation, it is found that the conductivity is proportional to T and τ for k_BT≫h/τ and is independent of T and τ for k_BT≪h/τ. Further, the conductivity, which is independent of T in the ZGS state, is examined for the impurity scattering in terms of the Born approximation.
- 社団法人日本物理学会の論文
- 2006-02-15
著者
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KOBAYASHI Akito
Department of Physics,Nagoya University
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Suzumura Y
名古屋大 大学院理学研究科
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SUZUMURA Yoshikazu
Department of Physics, Nagoya University
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Kobayashi A
Department Of Physics Division Of Material Science Nagoya University
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Kobayashi Akito
Department Of Physics Nagoya University
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KATAYAMA Shinya
Department of Physical Electronics, Tokyo Institute of Technology
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Kobayashi Akito
Department Of Physics Division Of Material Science Nagoya University
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Katayama Shinya
Department Of Physics Nagoya University
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Katayama Shinya
Department Of Physical Electronics Tokyo Institute Of Technology:(present Address)nippon Sheet Glass
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Suzumura Yoshikazu
Department Of Physics Nagoya University
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Suzumura Yoshikazu
Department Of Physics Faculty Of Science Tohoku University
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