Effects of Growth Conditions on Electron Trap Concentrations in Si-Doped Al_<0.2>Ga_<0.8>As Grown by MBE
スポンサーリンク
概要
- 論文の詳細を見る
Electron traps in Al_<0.2>Ga_<0.8>As layers grown by molecular beam epitaxy were investigated with DLTS. Six electron trap levels were observed. The dominant level (ME6) has a thermal activation energy of 0.71 eV, and its concentration decreases with increasing growth temperature and decreasing group V/III beam flux ratio. It is suggested that ME6 is related to a Ga vacancy or a Ga vacancy complex.
- 社団法人応用物理学会の論文
- 1984-02-20
著者
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MIHARA Minoru
Optoelectronics Joint Research Laboratory
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ISHII Makoto
Optoelectronics Joint Research Laboratory
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Ishii M
Electrotechnical Laboratory
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Ishii M
Optoelectronics Joint Research Laboratory
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Mihara Minoru
Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co
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Ishii M
Liquid Crystal Lab. Sharp Corp.
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Ishii M
Central Research Laboratory Nihon Cement Co. Lid.
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Miki Masami
Department Of Earth & Space Science Graduate School Of Science Osaka University
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Yamanaka K
Mechanical Engineering Lab. Ibaraki Jpn
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Yamanaka K
Graduate School Of Engineering Tohoku University
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Naritsuka S
Meijo Univ. Nagoya Jpn
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NARITSUKA Shigeya
Optoelectronics Joint Research Laboratory
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YAMANAKA Kenichi
Optoelectronics Joint Research Laboratory
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