Reactive Ion-Beam Etching of InP with Cl_2
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-06-20
著者
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MIHARA Minoru
Optoelectronics Joint Research Laboratory
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Mihara Minoru
Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co
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Nakajima M
Optoelectronics Joint Research Laboratory
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Nakajima M
Mitsubishi Electric Corp. Amagasaki
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MUTOH Katsuhiko
Opto-Electronics Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial
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NAKAJIMA Masato
Opto-Electronics Research Laboratory, Semiconductor Research Center, Matsushita Electric Industrial
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Miki Masami
Department Of Earth & Space Science Graduate School Of Science Osaka University
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Mutoh Katsuhiko
Opto-electronics Research Laboratory Semiconductor Research Center Matsushita Electric Industrial Co
関連論文
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- β Decays of Nucleons and Quarks Embedded in the Nucleus
- SIMS Study of Si-Be Co-doping Effects for Suppression of Compositional Disordering in AlGaAs-GaAs Superlattices
- SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs-GaAs Superlattice
- X-Ray Responsivities of Direct-Scintillator-Deposited Charge-Coupled Device
- Reactive Ion-Beam Etching of InP with Cl_2
- Measurement of Finite Amplitude Ultrasound Wave Fields by Light Beam CT : Acoustical Measurements and Instrumentation
- Optical Observation of Finite Amplitude Ultrasonic Waveform : Acoustical Measurements and Instrumentation
- Effect of Melt Stoichiometry on Electrical Activation Uniformity of Si-Implanted Layers in Undoped Semi-Insulating GaAs
- Striations in Undoped Semi-Insulating LEC GaAs
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As_4
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
- Low-Pressure OMVPE of GaAs Using Triethylgallium
- Chopping Frequency Dependence of Photoacoustic Spectrum in Porous Silicon
- Photoacoustic Spectrum and Surface Morphology of Porous Silicon
- Application of the Mesh Experiment for the Back-illuminated Charge-Coupled Device : I. Experiment and the Charge Cloud Shape
- Direct X-Ray Imaging of μm Precision Using Back-Illuminated Charge-Coupled Device
- Grid-Controlled Extraction of Low-Charged Ions from a Laser Ion Source
- Starting Process of Laser-Triggered Vacuum Arc Ion Source
- Correlation between Soft X-Ray Emission and Dynamics of Fast Capillary Discharges
- Dislocation Velocities in InAs and GaSb
- Dislocation Velocities in GaAs
- Proton Irradiation Experiment for X-ray Charge-Coupled Devices of the Monitor of All-Sky X-ray Image Mission Onboard the International Space Station : I. Experimental Setup and Measurement of the Charge Transfer Inefficiency
- Photoluminescence of the 78 meV Acceptor in GaAs Layers Grown by Molecular Bearn Epitaxy
- Effect of Arsenic Source on Electron Trap Concentrationsin MBE-Grown Al_Ga_As
- Effects of Growth Conditions on Electron Trap Concentrations in Si-Doped Al_Ga_As Grown by MBE