ISHIHARA Hanae | Department of Physical Electronics, Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
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山田 明
東京工業大学大学院理工学研究科電子物理工学専攻
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ISHIHARA Hanae
Department of Physical Electronics, Tokyo Institute of Technology
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Yamada Akira
Frontier Research Program The Institute Of Physical And Chemical Research (riken)
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Konagai M
Tokyo Inst. Technol. Tokyo Jpn
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Ishihara Hanae
Department Of Physical Electronics Tokyo Institute Of Technology
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山田 晃
東京農工大学生物システム応用科学府
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MURANO Masahiko
Department of Physical Electronics, Tokyo Institute of Technology
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YAMADA Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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ABE Katsuya
Department of Physical Electronics, Tokyo Institute of Technology
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YAMADA Akira
Research Center for Quantum Effect Electronics, Tokyo Institute of Technology
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WATAHIKI Tatsuro
Department of Physical Electronics, Tokyo Institute of Technology
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KONAGAI Makoto
Tokyo Institute of Technology
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山田 晃
東京農工大学生物システム応用科学研究科
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Watahiki Tatsuro
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
著作論文
- Growth of Strain-Relaxed Si_C_y Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
- Characterization and Comparison of Strained Si_C_y Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method