NARAYANAN Kannan | Department of Physical Electronics, Tokyo Institute of Technology
スポンサーリンク
概要
関連著者
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NARAYANAN Kannan
Department of Physical Electronics, Tokyo Institute of Technology
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SOGA Tetsuo
Department of Frontier Materials, Nagoya Institute of Technology
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Narayanan K
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Yamaguchi Masafumi
Semiconductor Research Center Toyota Technological Institute
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山田 晃
東京農工大学生物システム応用科学府
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YAMADA Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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KONAGAI Makoto
Tokyo Institute of Technology
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Yamada Akira
Frontier Research Program The Institute Of Physical And Chemical Research (riken)
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Soga Tetsuo
Department Of Electronics Faculty Of Engineering Nagoya University
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Soga Tetsuo
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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山田 晃
東京農工大学生物システム応用科学研究科
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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MIYAJIMA Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology
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BANERJEE Chandan
Department of Physical Electronics, Tokyo Institute of Technology
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HAGA Keisuke
Department of Physical Electronics, Tokyo Institute of Technology
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SRITHARATHIKHUN Jaran
Department of Physical Electronics, Tokyo Institute of Technology
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Narayanan Kannan
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Banerjee Chandan
Department Of Physical Electronics Tokyo Institute Of Technology
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EKINS-DAUKES Nicholas
Semiconductor Research Center, Toyota Technological Institute
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OSHITA Yoshio
Semiconductor Research Center, Toyota Technological Institute
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Oshita Yoshio
Semiconductor Research Center Toyota Technological Institute
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Soga Tetsuo
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466
著作論文
- Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
- Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
- Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films