Electrical Properties of Carbon Nanotube Field-Effect Transistors with Multiple Channels Measured by Scanning Gate Microscopy
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概要
- 論文の詳細を見る
Electrical properties of a carbon nanotube field-effect transistor (CNT-FET) with multiple CNT channels were studied by scanning gate microscopy (SGM), in which the scanning probe tip was used as a local gate. It was possible to distinguish the difference in electrical properties of individual CNT channels by SGM. Spot like SGM images were attributed to the barrier against carriers formed in the metallic CNT, resulting in a current modulation of the CNT-FET. It has also been shown that the barrier in the metallic CNT results in an ambipolar behavior of the CNT-FETs.
- 2010-02-25
著者
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Ohno Yutaka
Department Of Information Science Faculty Of Engineering Kyoto University
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Yuki Okigawa
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Yutaka Ohno
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Okigawa Yuki
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Takashi Mizutani
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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Shigeru Kishimoto
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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