Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors: Effect of Contamination Induced by Device Fabrication Process
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概要
- 論文の詳細を見る
We have statistically studied the suppression of hysteresis in carbon nanotube field-effect transistors. The effect of the device fabrication process on the hysteresis has been investigated. The results show that contamination induced by the fabrication process impedes the suppression of hysteresis in device passivation. To remove the contamination, we have introduced a cleaning process as a treatment before passivation. The effectiveness of passivation with polymethylmetacrylate has been improved by the cleaning process using H2SO4/H2O2 solution.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-06-30
著者
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SHIMAUCHI Hideki
Department of Quantum Engineering, Nagoya University
-
Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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