Characterization of Carbon Nanotube FETs by Electrostatic Force Microscopy(Session3: Emerging Devices I)
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概要
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The surface potential of the carbon nanotube field-effect transistors (CNT-FETs) was evaluated by electrostatic force measurement. A clear potential image of the CNT channel with a diameter of 1.1nm was obtained. The measured potential image was dependent on the sequence of the gate bias, and showed transient behavior with a time constant of several 10 minutes. These behaviors were consistent with the drain current transient and the hysteresis of the current-voltage characteristic of the CNT-FETs. Nonuniform potential profile was obtained when the CNT-FET was in the OFF state in contrast with the uniform potential profile for the device biased in the OFF state, suggesting the existence of the defect in the CNT channel.
- 2008-07-02
著者
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MIZUTANI Takashi
Department of Quantum Engineering, Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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