Fabrication Technique for Carbon Nanotube Single-Electron Transistors Using Focused Ion Beam
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概要
- 論文の詳細を見る
We have proposed a technique for fabricating carbon nanotube single-electron transistors using a focused ion beam (FIB). Wiring to a multiwalled carbon nanotube was formed by the ion-beam-assisted deposition of tungsten. Tunneling barriers were formed in the nanotube by ion beam etching. A drain current oscillation originating from the Coulomb blockade effect was observed at 23 K.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-08-15
著者
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Kishimoto Shigeru
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Ohno Yutaka
Department Of Information Science Faculty Of Engineering Kyoto University
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Kurokawa Yuto
Department Of Quantum Engineering Nagoya University
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Okazaki Toshiya
Department Of Chemistry Nagoya University
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Mizutani Takashi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University
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Shinohara Hisanori
Department Of Cardiology And Clinical Research
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Kurokawa Yuto
Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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Shinohara Hisanori
Department of Chemistry, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan
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Ohno Yutaka
Department of Applied Chemistry, Faculty of Engineering, Tohoku University
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